发明名称 |
Apparatus for forming thin films |
摘要 |
An apparatus for forming epitaxial layers, comprises a first susceptor disposed in a reaction furnace and having an outer periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers, a second susceptor disposed coaxially with the first susceptor such as to surround the first susceptor at a predetermined space therefrom and having an inner periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers such that these semiconductor wafers face the semiconductor wafers supported by the first susceptor, and a pair of heat reflection members disposed in the reaction furnace between the outer periphery of the first susceptor and the inner periphery of the second susceptor. The first and second susceptors are rotated in mutually opposite directions about a common vertical axis during an epitaxial growing process.
|
申请公布号 |
US4848272(A) |
申请公布日期 |
1989.07.18 |
申请号 |
US19880162064 |
申请日期 |
1988.02.29 |
申请人 |
NIPPON KOKAN KABUSHIKI KAISHA |
发明人 |
OHMURA, MASANORI;SAKAMA, HIROSHI;ARAKI, KENJI;KAMIO, HIROSHI;SHIMA, YOSHINOBU |
分类号 |
H01L21/205;C23C16/458;C30B25/10;C30B25/12 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|