Method for forming silicon carbide semiconductor film

摘要

A method for forming a SiC film having a wide optical energy gap and a high conductivity, which is capable of being stacked on a substrate of a large area uniformly. The SiC film is formed by supplying a material gas composed of monosilane gas, methane gas, diboran gas and hydrogen gas and having a hydrogen dilution ratio of about 144 and carbon mixing ratio of about 0.35, to the substrate, and supplying rf power of 60 to 270W(rf power density=80 to 350mW/cm2) under a gas pressure of 0.2 torr at a substrate temperature of 220 DEG C. The obtained film exhibits high dark-conductivity of 10-6Scm-1 or more, and a Raman spectrum light thereof peaks at around 520 cm-1.