发明名称 TECHNIQUE FOR PROGRAMMING JUNCTION-PROGRAMMABLE READ-ONLY MEMORIES
摘要 A method of programming a cell in a PROM, wherein the cell comprises a bipolar transistor having a floating base, comprises applying a current rising with time across the emitter to collector contacts of the bipolar transistor with the collector contact serving as the reference potential, measuring the time at which the rise in voltage suddenly stops and the voltage drops a small amount, and then holding the current for a selected time following the voltage drop, thereby to insure that the emitter base junction of the bipolar transistor is destroyed while at the same time not damaging the base collector junction of the biplolar transistor.
申请公布号 DE3380006(D1) 申请公布日期 1989.07.06
申请号 DE19833380006 申请日期 1983.02.15
申请人 FAIRCHILD SEMICONDUCTOR CORPORATION 发明人 CHONG, FU C.
分类号 G11C17/00;G11C17/08;G11C17/14;G11C17/16;H01L27/102;(IPC1-7):H01L27/10 主分类号 G11C17/00
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