Method of forming shallow junction and semiconductor device having said shallow junction.

摘要

A method of forming a shallow junction comprises the step of: forming a film including a hydrogen ccmpound with one element selected from the group of boron, phosphorus arsenic to a thickness of several atom layers to 1000 ANGSTROM on a silicon substrate and annealing the film, whereby an impurity region having a depth of 1000 ANGSTROM or less and an impurity concentration of 10<1><8> to 10<2><1> cm<-><3> is formed in the surface layer of the silicon layer.