| 摘要 |
<p>PURPOSE:To form an electrode capable of obtaining an ohmic contact at a low temperature by applying resin paste mainly comprising copper to a compound semiconductor surface, drying the resin paste at a temperature lower than 250 deg.C to shape both electrodes. CONSTITUTION:On a first film layer 2 comprising a compound semiconductor substance of either P or N conductive type, a compound semiconductor substance of the opposite conductivity type is formed as a second film layer 3. To shape electrodes 7, 8 on the film layers 2, 3, the electrodes 7, 8 are formed by applying resin paste mainly comprising copper and drying the resin paste at a temperature of 250 deg.C or less. The paste is dried by irradiating far infrared rays. Copper is used mainly as a conductive substance in the paste, thus reducing material cost. Accordingly, the electrodes 7, 8 capable of acquiring an ohmic contact at a low temperature are formed.</p> |
