发明名称 |
Semiconductor memory cell including cross-coupled bipolar transistors and Schottky diodes |
摘要 |
A semiconductor memory cell includes cross coupled bipolar transistors operated in the forward current mode with power fed to the base of the transistor through Schottky diodes from separate word lines. Bit lines are connected to the transistors' emitters and a high differential current is sensed between the bit lines during read operations. No resistors are included within the cell.
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申请公布号 |
US4845674(A) |
申请公布日期 |
1989.07.04 |
申请号 |
US19840569873 |
申请日期 |
1984.01.11 |
申请人 |
HONEYWELL, INC. |
发明人 |
VU, THO T. |
分类号 |
H01L27/082;G11C11/411;H01L21/8222;H01L21/8229;H01L27/10;H01L27/102;H03K19/091 |
主分类号 |
H01L27/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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