发明名称 |
Method of and apparatus for etching |
摘要 |
A plasma which is formed by the contact between a microwave and a reaction gas is brought into contact with an article to be etched which is AC-biased, thereby effecting etching of an exposed region of the article. The etching is carried out in a state wherein the self-bias formed between the plasma and the article is minimized, whereby it is possible to effect etching which provides high selectivity and which enables a substantially vertical side wall to be formed.
|
申请公布号 |
US4844767(A) |
申请公布日期 |
1989.07.04 |
申请号 |
US19880158126 |
申请日期 |
1988.02.16 |
申请人 |
HITACHI, LTD. |
发明人 |
OKUDAIRA, SADAYUKI;NISHIMATSI, SHIGERU;SUZUKI, KEIZO;NINOMIYA, KEN |
分类号 |
H01L21/302;C23F4/00;H01J37/32;H01L21/3065;H01L21/3213 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|