发明名称 |
PROCESS FOR FABRICATING MULTI-LEVEL-METAL INTEGRATED CIRCUITS AT HIGH YIELDS |
摘要 |
Inter-layer electrical shorting between layers of conductors of an integrated circuit caused by "hillocks" in the bottom layer is prevented by the use of a double layer photoresist coatings atop the insulating layer that separates the metal layers. The double layer photoresist insures that irregularities in the dielectric layer caused by hillocks in the underlying insulating layer do not cause a break in the photoresist and a subsequent undesired etching of a spurious "via" through the dielectric layer. |
申请公布号 |
DE3570555(D1) |
申请公布日期 |
1989.06.29 |
申请号 |
DE19853570555 |
申请日期 |
1985.11.25 |
申请人 |
HUGHES AIRCRAFT COMPANY |
发明人 |
LEE, WILLIAM, W., Y.;SHAW, GARETH, L.;CLAYTON, JAMES, W. |
分类号 |
H01L21/3213;H01L21/768;H01L23/528;(IPC1-7):H01L21/90 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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