Voltage supply switching device for nonvolatile memories in MOS technology.

摘要

Two P channel selection transistors (5, 6) are inserted in respective connecting circuit branches between two external pins (2, 3) with voltages Vcc and Vpp respectively and an internal node (4). A switching circuit (12) controls said selection transistors (5, 6). Circuit means (11) are provided to hold the body bias of the selection transistors (5, 6) at a voltage equal to the highest voltage present from time to time at said external pins (2, 3).