Passivation of indium gallium arsenide surfaces

摘要

A method of passivating the surface of an indium gallium arsenide substrate by cleaning the indium gallium arsenide substrate in an etching solution and depositing a sodium hydroxide film on the substrate. The step of depositing the sodium hydroxide film is preferably performed by spin-on of a sodium hydroxide solution, followed by drying or annealing. The resulting passivated surface exhibits superior surface recombination velocity characteristics compared to prior art passivation techniques, thereby making possible superior solid state device operating characteristics.