发明名称 Method of treating photoresists
摘要 Ultraviolet radiation process applies to manufacture semiconductor devices in order to enhance the thermal stability of the photoresist film on semiconductors wafers. A method of treating photoresist materials applied in order to enhance the thermal stability of the photoresist film on semiconductor wafer employing heating and ultraviolet irradiation, which meets the demand for improvement in heat resistance and plasma resistance of the photoresists. The initial heating temperature of the photoresist is set to be a little higher than the initial flow temperature, and the temperature of the photoresist is raised in proportion as the flow temperature of the photoresist is increased by exposing the photoresist to ultraviolet radiation and/or heating.
申请公布号 US4842992(A) 申请公布日期 1989.06.27
申请号 US19880195415 申请日期 1988.05.12
申请人 USHIO DENKI 发明人 ARAI, TETSUJI
分类号 G03F7/38;G03F7/20;G03F7/40;H01L21/027 主分类号 G03F7/38
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