| 摘要 |
PURPOSE:To form a good-quality hydrogenated amorphous silicon film at a high rate by adjacently arranging a high-frequency discharge electrode and a grounding electrode with the discharge port for a gaseous Si-contg. material inbetween to form a group of electrodes, and producing high-frequency plasma by the electrode group. CONSTITUTION:A gaseous Si-contg. material such as Si2H6 is discharged from the discharge port 21 in a vacuum vessel 1. Meanwhile, a substrate 101 fixed to a substrate holder 2 is heated to a specified temp. by a heater 4, and rotated by a motor 3. Under such conditions, an RF power source 8 is connected to the electrode group 22, and plasma is produced between the electrode group 22 and the grounded substrate holder 2. The gaseous material is decomposed in the plasma, and the film of hydrogenated amorphous silicon (a-Si:H) is formed on the substrate 101. In the a-Si:H film forming device, the discharge electrode 22A connected to the RF power source 8 and the grounding electrode 22B are adjacently arranged with the discharge port 21 inbetween to form the electrode group 22. By this method, a good-quality a-Si:H film is formed at a high rate under the low-pressure conditions where powdery Si is not generated without lowering the brightness-darkness resistance ratio. |
