| 摘要 |
PURPOSE:To prevent the generation of the convex part on a crystal layer to be formed on a substrate by a method wherein an inclination is provided at a concave part to bury the substrate, and the substrate is inclined to be buried. CONSTITUTION:The inclination is provided on the surface of the supporting base 11 of the epitaxial growth device, the inclination is provided to the concave part 13 to be buried with the CdTe substrate 12 in accordance therewith, and the substrate 12 to be buried is made to have the inclination. The Hg1-xCdxTe material is filled up in a liquid reservoir formed by the supporting base 11 having the inclination like this and a slide member 14 to transfer slidingly thereon. After then, the member 14 is transferred under the prescribed condition, and the liquid reservoir 15 accommodating with the liquid phase of Hg1-xCdxTe is made to stand still on the substrate 12. After then, the member 14 is transferred in the phase formed with the crystal layer on the substrate 12, and the remaining liquid phase of Hg1-xCdxTe fallen into disuse and remaining on the substrate 12 after completion of epitaxial growth is wiped to be removed by the member 14. At this time, the unnecessary Hg1-xCdxTe liquid phase having small viscosity, and moreover having small surface tension transfers to the C direction at the edge part of the lower side of the substrate 12. |
