| 摘要 |
PURPOSE:To eliminate the film reduction of an unexposed part and to improve resolution by subjecting the surface of a resist coated film to a processing which hinders the solubility of an aq. alkaline soln. and annihilating the hindering effect of the exposed part by exposing of X-rays/UV rays/electron beams, etc., then subjecting said surface to a heating treatment after exposing to increase the effect of the dissolution hindering treatment of the unexposed part. CONSTITUTION:A dissolution hindering layer consisting of a radiation degradation type polymer is formed on the surface of the resist coated film and the concn. distribution in the film thickness direction of the dissolution restrainer in the resist is stressed. Exposing of the prescribed pattern is thereafter executed to decompose the dissolution hindering layer of the exposed part. The coated film is subjected to the heating treatment after the exposing to again increase the recoordination density of the dissolution hindering layer of the unexposed part of the resist and to increase the dissolution hindering effect of the unexposed part as well as to accelerate the decomposition of the residual dissolution restrainer in the exposed part; thereafter, the resist is developed. The film reduction of the unexposed part at the time of development of the resist is thereby hindered and, therefore, the reinforced development is possible. The practicable sensitivity and resolution for pattern formation of the resist are thus improved. |
