发明名称 |
Electrically erasable and programmable read only memory using stacked-gate cell. |
摘要 |
<p>An electrically erasable programmable nonvolatile memory device includes a plurality of memory cells. The memory device has architecture similar to or same as UV-EPROM. Erasure operating is performed by applying negative voltage to control gate so as to inject hall into the floating gate (4).</p> |
申请公布号 |
EP0320916(A2) |
申请公布日期 |
1989.06.21 |
申请号 |
EP19880120919 |
申请日期 |
1988.12.14 |
申请人 |
SONY CORPORATION |
发明人 |
ARAKAWA, HIDEKI |
分类号 |
G11C16/04;G11C17/00;G11C16/06;G11C16/08;G11C16/14;H01L21/822;H01L21/8246;H01L21/8247;H01L27/04;H01L27/112;H01L29/788;H01L29/792 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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