| 摘要 |
PURPOSE:To increase the performance of a MOS-type device or CMOS-type device as well as to reduce the manufacturing cost, by forming the first lower- density impurity area on a drain area which constitutes an LDD structure of a MOS-type device and an internal base area of a bi-polar type device, by the same process. CONSTITUTION:After application of a resist on the whole surface, a resist is removed from an N-type well area 16 and a device area of a CMOS P-channel type transistor, for making a collector area of a bi-polar transistor. Then, an ion implantation is conducted using a remaining resist 24, a field oxide film 17, a CVD film 22 and a gate electrode 21 as masks. On an N-type well area 15 of the device area of the CMOS p-channel type transistor and the N-type well area 16 of the device area of a bi-polar transistor, lower-density P<-> impurity areas 25 and 26 are formed. The P<-> impurity area 25 is to form an LDD structure in a CMOS P-channel type transistor while the P<-> impurity area 26 is to be used as an internal base area of a bi-polar transistor. |
