发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To make the injector currents of I<2>L circuits of multistage (stacked) constitution constant, by using the 1st I<2>L circuit and the 2nd I<2>L circuit connected in series with the negative side current line of the 1st I<2>L circuit. CONSTITUTION:Constant-current (injector) transistors TRQ11 and TRQ1n and switching TRs Q21 and Q2n constitute the 1st-stage I<2>L circuit. Further, constant- current TRs Q11' and Q1n' and switching TRs Q21' and Q2n' constitute the 2nd- stage I<2>L circuit. Those I<2>L circuits are connected in series to form two-stage constitution. Namely, an injection current IO1 is supplied from a constant current source to the positive power supply line (emitter of pnp TR Q11 or Q1n) of the 1st-stage I<2>L circuit. Further, the negative current source supply line (base of pnpTRQ11 or Q1n and emitter of npnTRQ21 or Q2n) of the 1st-stage I<2>L circuit is connected to the positive power supply line (emitter of pnpTRQ11' or Q1n') of the 2nd I<2>L circuit. Then, the I<2>L circuit of the other stage is provided to the negative-side power supply line of the 1st-stage I<2>L circuit and a dummy gate for switching current compensation is provided to the output gate.
申请公布号 JPS58210721(A) 申请公布日期 1983.12.08
申请号 JP19820093111 申请日期 1982.06.02
申请人 HITACHI SEISAKUSHO KK 发明人 FURUHATA MAKOTO
分类号 H03K19/091;(IPC1-7):03K19/091 主分类号 H03K19/091
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