| 摘要 |
PURPOSE:To facilitate confirmation of the progress at the etching to follow when a resist layer is adhered on the surface of a wafer, and the chip patterns of the plural number are to be printed out by the reduction projection method according to the step-and-repeat means by a method wherein after the partial chip patterns are printed out at least doubly shifting by the proper quantity, the patterns are developed. CONSTITUTION:A positive resist layer 2 is adhered on the surface of the GGG wafer 1 completed with the prescribed process, and the first printing of the chip patterns 3 is performed by the reduction projection method according to the step-and-repeat means. Then the secondary printing of the patterns 3-1'- 3-4' shifted by about 3mum upward or downward in relation to the previously selected chip patterns 3-1-3-4 is performed making to overlap using the same mask and spending the hours of two times. When etching is performed after then, the patterns being not overlappingly printed form the faithful patterns in relation to the mask, while the resists at the overlappingly printed parts are molten to be removed, and completion of etching can be visually confirmed. |
