发明名称 MANUFACTURE OF SPUTTERING TARGET
摘要 PURPOSE:To obtain a target reduced in oxygen content and causing no distribution of composition in the film-forming plane by placing a powder of rare earth- transition metal alloy and an ingot of this alloy in a mold, heating the mold at a temp. between the melting points of both, and then working the resulting formed body after cooling. CONSTITUTION:A powder 4 of rare earth-transition metal alloy and an ingot 3 of rare earth-transition metal alloy are placed in a crucible 1, etc., which is evacuated. The crucible 1 is heated by means of a high-frequency induction heating coil 2, etc., at a temp. between the melting point of the powder 4 and that of the ingot 3, by which the molten metal of the ingot 3 is infiltrated into the pores of the powder 4 to fill the pores. The ingot after cooling is formed into two phases of the grain 21 of the rare earth-transition metal alloy, a rare-earth single phase 21, and a rare earth-transition metal alloy phase 23. By working and grinding this ingot, a sputtering target is formed. As to the principal composition of the target, it is desirable to incorporate one or more light rare earth metals among Sm, Nd, Pr, and Ce, one or more heavy rare earth metals among Gd, Tb, and Dy, and either or both between the transition metals Fe and Co.
申请公布号 JPH01156469(A) 申请公布日期 1989.06.20
申请号 JP19870315615 申请日期 1987.12.14
申请人 SEIKO EPSON CORP 发明人 AOYAMA AKIRA;YAMAGISHI TOSHIHIKO;SHIMOKAWA TADATOSHI
分类号 C23C14/34 主分类号 C23C14/34
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