发明名称 MANUFACTURE OF SPUTTERING TARGET
摘要 PURPOSE:To obtain a target reduced in oxygen content and causing no distribution of composition in the film-forming plane by placing a powder of transition metal and an ingot of rare earth-transition metal alloy in a mold, heating the mold at a temp. between the melting points of both, and then working the resulting formed body after cooling. CONSTITUTION:A powder 4 of transition metal and an ingot 3 of rare earth- transition metal alloy are placed in a crucible 1, etc., which is evaporated. The crucible 1 is heated by means of a high-frequency induction heating coil 2, etc., at a temp. between the melting point of the transition metal and that of the rare earth-transition metal alloy, by which the molten metal of the ingot 3 is infiltrated into the pores of the powder 4 to fill the pores. The ingot after cooling is formed into three phases of a rare-earth single phase 22, a rare earth- transition metal alloy phase 23, and a transition-metal single phase 21. By working and grinding this ingot, a sputtering target is formed. As to the peripheral composition of the target, it is desirable to incorporate one or more heavy rare earth metals among Gd, Tb, and Dy and one or more transition metals between Fe and Co.
申请公布号 JPH01156468(A) 申请公布日期 1989.06.20
申请号 JP19870315614 申请日期 1987.12.14
申请人 SEIKO EPSON CORP 发明人 AOYAMA AKIRA;YAMAGISHI TOSHIHIKO;SHIMOKAWA TADATOSHI
分类号 C23C14/34;G11B5/851;G11B11/105;H01F41/18 主分类号 C23C14/34
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