| 摘要 |
PURPOSE:To produce very dense zirconia film formed on a substrate, having high heat-resistance, heat-insulation, corrosion resistance, etc., consisting of stabilized or partially stabilized zirconia and of which only specified crystal face orients parallel to the surface of the substrate. CONSTITUTION:The zirconia film is formed on the substrate and consists of stabilized or partially stabilized zirconia, and substantially only one or two kinds of crystal faces selected from the group consisting of (111) and (200), orient parallel to the surface of the substrate above-mentioned. The zirconia film above-mentioned is produced by the following method. Oxygen gas, zirconium halogenide and halogenide of stabilizing element, are separately supplied to the reaction zone adjacent to the substrate maintained at 1000-1400 deg.C. In the production above-mentioned, the kind of the specified crystal face can be selectively determined by controlling the time beginning to supply zirconium halogenide and halogenide of stabilizing element. |
