| 摘要 |
PURPOSE:To form connection between each of conductive lines having a fine shape without disconnections and to a flat shape by shaping a conductive metallic region connecting the conductive lines before forming an interlayer insulating layer. CONSTITUTION:First metallic layers 6, 7 are applied directly or through an insulating layer 2 onto a semiconductor substrate 1, an insulating layer 8 for plating is shaped onto the layers 6, 7, and the surface of the first metallic layer 7 is exposed partially through selective removal. A conductive metallic region 9 in predetermined thickness is formed through a plating method, using the first metallic layers 6, 7 as conductive paths for plating, the insulating layer 8 for plating is removed, the first metallic layers 6, 7 are removed with the exception of the lower section of the conductive metallic region 9 and a section near the region 9, and a lower-layer conductive line 10 is shaped. A first insulating layer 11 thicker than the sum of the thickness of the lower-layer conductive line 10 and the conductive metallic region 9 is applied, the surface of the conductive metallic region 9 is exposed through an etchback method to form an interlayer insulating layer 3, and an upper-layer conductive line 5 connected to the conductive metallic region 9 is shaped.
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