| 摘要 |
PURPOSE:To make it possible to detect wave length above 2mum at a temperature below room temperature, by arranging plural electrodes on photo waveguide passage on a semiconductor substrate in such a manner as to be mutually connected and taking out on an outside circuit between the substrates a current based on the light propagating the waveguide passage. CONSTITUTION:As refractive index of a semiconductor layer 2 is higher than a substrate 2 and an insulating membrane 3, a photo waveguide passage is formed, and by applying light from an end surface 6 and reflecting it on the other end, a constant wave is formed on the layer 2. By setting propagation wave length to lambdag, an electrode, whose length is: l0=(m0+k)lambdag, is provided on the waveguide passage 2. In this case, m0 is to be 0 or an integral number, that is, 1/4<k<3/4. In an outside circuit, in which m1 pieces of electrodes are arranged at intervals: l=(m+ delta)lambdag (m is to be 0 or an integral number: 0<=delta<1/4mt), m1 pieces are joined together to be connected to an electrode for outside connection, and an electronic current ip, which is accelerated (arrow) following a field strength E1 of a light wave in the waveguide passage 2, is taken out in the outside circuit connected between the substrates. It is possible to obtain a wave-length-dependent output current and to detect at normal temperature a light having a wave length of 10nm. |
