| 摘要 |
PURPOSE:To miniaturize a semiconductor integrated circuit device, and to improve the degree of integration thereof by forming a plurality of trenches shaped to a semiconductor substrate and a thin film resistor crossing a plurality of the trenches and being formed through an insulating film. CONSTITUTION:A plurality of V trenches 4 are formed onto a semiconductor substrate 1, and an oxide film 2 is shaped onto the surfaces of the trenches 4. A thin-film resistor 3 is formed onto the oxide film 2, crossing the V trenches 4. Consequently, the overall length of a current path operating as the resistor can be made longer than a thin-film resistor shaped by conventional structure. Accordingly, the thin-film resistor having high resistance is acquired without spreading an occupied area, thus miniaturizing a semiconductor integrated circuit device, then improving the degree of integretion of the device. |
