| 摘要 |
PURPOSE:To prevent the mulfunction of the title light emitting device due to the contact of a gold wire and the like by a method wherein a light emitting element pellet is mounted on the island part of the heat sink part which will be insulated effectively when the device is in operation, and the electrode on the bonding surface side of an element pellet is connected to the heat sink part other than the island part. CONSTITUTION:The title light emitting device is composed of the heat sink 2, consisting of the P-type silicon substrate provided with the impurity diffusion 21 on which a semiconductor pellet 1 and N-type impurities are formed, and a stem 20. A gold electrode 4 is vapordeposited on the above-mentioned heat sink 2, then tin 3 is vapordeposited on the pellet mounting part located on the upper part of the impurity diffusion region 21, an electrode is formed on an undiffused region leaving a part of the undiffused region, and a bonding part 12 on which gold is vapor-deposited is formed. The mounting part, on which tin 3 is vapor-deposited, is fused by the beat of the heat sink 2, the pellet 1 is fixed, and the pellet part 1 is contacted to the bonding part 12 using a gold wire 11. |
