| 摘要 |
PURPOSE:To obtain a semiconductor integrated circuit having a high degree of integration and excellent operating characteristics by collecting the threshold voltage of MOS type elements in one integrated circuit within a tolerance even when electron beam lithography is adopted for forming an internal wiring, etc. CONSTITUTION:The internal wirings of an integrated circuit including MOS type elements (FETs) 1 are formed through lithography selectively applying a high energy beam such as an electron beam, ion beam, x-rays, gamma-rays or the like, and a high energy beam is applied only by quantity collecting the distribution of the threshold voltage Vth of the FETs 1 within a range required for imparting specified characteristics into an integrated circuit region containing a region not exposed to a high energy beam in a lithography process. The Vth of the FETs 1 after heat treatment can be converged within a tolerance regarding the Vth of the FETs 1 in the integrated circuit of a lot at that time when dosage is brought to 5X10<-4>C/cm<2> or more. Accordingly, the dispersion of Vth can be eliminated, thus further improving the degree of integration of the integrated circuit. |
