| 摘要 |
PURPOSE:To decrease contact resistance between a drain electrode and a drain substrate for enabling ON resistance to be decreased, by providing a contact region between the drain substrate and the drain electrode such that the contact region has a dopant concentration higher than the bulk dopant concentration of the drain substrate. CONSTITUTION:A field-effect-type semiconductor device comprises a drain substrate 1 of first conductivity type, semiconductor regions 2 of second conductivity type formed on predetermined places on the surface of the substrate 1, source regions 3 of the first conductivity type formed on predetermined places on the surface of the regions 2, gate insulating films 5 formed on the surface of channel forming regions 4 on the surface of the semiconductor regions 2 between the drain substrate 1 and the source regions 3, gate electrodes 6 formed thereon, interlayer insulating films 7 formed to cover the gate insulating films 5 and the gate electrodes 6 completely, a source electrode 8 covering the structure so as to short-circuit the source regions 3 with the semiconductor regions 2, and a drain electrode 9 formed on the rear face of the drain substrate 1. Dopant concentration in a contact region 10 between the drain substrate 1 and the drain electrode 9 is higher than the bulk dopant concentration of the drain substrate 1. |
