发明名称 Architecture for memory multiplexing
摘要 A solid state memory system is arranged in a plurality of blocks of memory cells, the memory cells in each block arranged in columns and rows. When the memory system is addressed for a memory reference, block selection circuitry selects one block of the plurality of blocks, excluding all of the other blocks. Each block has a set of sense amplifiers, corresponding in number to the number of bits in the output word. Each sense amplifier is connected to an isolation switch. The outputs from the sense amplifiers connected to the non-selected blocks are thereby isolated from the sense amplifier outputs from the selected block to minimize loading of the sense amplifier outputs from the selected block. The memory cells in each block are interconnected by metal row conductors and by metal column conductors.
申请公布号 US4837743(A) 申请公布日期 1989.06.06
申请号 US19870086329 申请日期 1987.08.17
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 CHIU, EDISON H.;TAI, JY-DER;HSU, TE-CHUAN
分类号 G11C11/41;G11C5/06;G11C7/10;G11C8/12;G11C11/419 主分类号 G11C11/41
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