| 摘要 |
PURPOSE:To prevent the variation of the resistance value of resistance load while thinning the film thickness of an inter-layer film by laminating an insulating layer having etching characteristics different from a semiconductor oxide film and the resistance load onto the semiconductor oxide film containing an impurity. CONSTITUTION:A semiconductor oxide film 2 containing an impurity such as PSG is formed onto a semiconductor base body 1 in specified film thickness (film thickness having low stress properties and a gettering effect) through CVD. An insulating layer 3 by the deposition of Si3N4 and resistance load 4 by the deposition of poly Si are shaped successively onto the semiconductor oxide film 2. The insulating layer 3 (silicon nitride such as Si3N4) is formed between the resistance load 4 and the semiconductor oxide film 2 (such as PSG) including the impurity. Accordingly, the impurity (P at the time of PSG) in the semiconductor oxide film 2 is hardly diffused to the resistance load 4 such as poly Si especially on a heat treatment process, and the resistance value of the resistance load 4 is hardly varied. |
