| 摘要 |
PURPOSE:To prevent a leakage between groove capacities from occurring by the isolating barrier of an extension region of an element isolating insulating film by interposing the extension region of the insulating film between groove capacity electrodes. CONSTITUTION:A plurality of grooves 3 opened on the surface of a semiconductor substrate 1 are formed on the substrate 1, and thin insulating films 2, 10 are respectively formed on the substrate 1 and the inner faces of the grooves 3. An impurity is implanted to the bottom and the side of the groove 3 in the lower half of the groove 3 thereby to form an impurity diffused layer 7. A conductive region 8 is buried in the groove 3, and a thin conductive film 9 is so formed on the substrate 1 as to be connected to the region 8. Groove capacity electrode elements are formed of the groove 3, the region 8 and the film 9. An extension region 4 is interposed, in addition to the layer 7 and the film 6, between the regions 8. Thus, both the electrode elements can be effectively electrically isolated therebetween. |
