| 摘要 |
PURPOSE:To make a high-density and high-speed chip element by installing the following: a conductor layer which connects an electrode of a lower-layer semiconductor wafer to an electrode of an upper-layer semiconductor chip; a flattening layer formed on the lower-layer semiconductor wafer. CONSTITUTION:Separately manufactured thin semiconductor chips are pasted one after another on a good-quality part inside a semiconductor wafer; wiring bodies 3, 7 of a lower-layer semiconductor chip and an upper-layer semiconductor chip are connected by using a conductive layer; a flattening layer 40 is provided in individual layers; when necessary, the wiring bodies 3, 7 are provided on the conductive layer and the flattening layer 40 inside the flattening layer 40. Accordingly, it is not required that upper-layer chips to be pasted one after another are equal to or smaller than chips in a lower layer; the order of chips to be pasted is not uniform; the chips can be pasted one after another in an optimum manner; the degree of freedom in the number of chips in individual layers becomes large; accordingly, a designing process and a manufacturing process for a connection, a wiring part or the like are simplified. By this setup, a high-density chip can be manufactured and is effective for a high-speed operation. |
