发明名称 SPUTTERING TARGET
摘要 PURPOSE:To effectively utilize a target and to reduce the cost by forming a nitride layer on the surface of a metal in the target consisting of the metal to be dissociated by sputtering. CONSTITUTION:The sputtering target consisting of the metal (e.g., Fe) to be dissociated by sputtering is heated in the salt bath consisting essentially of a cyanogen compd. to form an Fe4N layer on the target surface. As a result, when the protective film consisting essentially of Fe4N is formed, the part as the remainder material is inexpensive, the sputtering material is effectively utilized, and the inexpensive target is obtained.
申请公布号 JPH01139761(A) 申请公布日期 1989.06.01
申请号 JP19870298101 申请日期 1987.11.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKEMURA TSUYOTOSHI;ASAKAWA MASUO;HIRATA KENJI
分类号 C23C14/34 主分类号 C23C14/34
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