| 摘要 |
PURPOSE:To form a high-accuracy pattern by a method wherein an exposure operation is executed in a developing solution by making use of a patterned light-shielding layer on a photoresist layer as a mask so that an amount of an undercut can be reduced even in a thick photoresist layer. CONSTITUTION:An LSI substrate 101 is immersed in a resist developing solution 106; a beam 107 is irradiated simultaneously. During this process, because a resist 102 to be used is of a positive type, only a part irradiated with the beam 107 is dissolved in the developing solution 106. While an exposure operation and a developing operation are repeated continuously, a pattern 108 for electrode formation use is formed with reference to the thick-film resist 102. That is to say, a light-shielding layer on a photoresist layer acts as a mask during the exposure operation, and only the part of the resist 102 irradiated with the beam 107 is dissolved by the developing solution. In addition, because the exposure operation is executed in the developing solution, the exposure operation and the developing operation are executed continuously. By this setup, even when the thick photoresist layer 102 is used, exposure to light is suppressed sharply in a transverse direction of a pattern edge part; accordingly, it is possible to form a high-accuracy pattern whose amount of an undercut is small. |
