Floating gate type semiconductor memory device,申请号US19870136766-传众专利搜索

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发明名称	Floating gate type semiconductor memory device
摘要
申请公布号	US4835740(A)	申请公布日期	1989.05.30
申请号	US19870136766	申请日期	1987.12.22
申请人	KABUSHIKI KAISHA TOSHIBA	发明人	SATO, MASAKI
分类号	H01L21/8247;H01L29/788	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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