发明名称 |
Electron gas hole gas tunneling transistor device |
摘要 |
Disclosed is a semiconductor device comprising a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer which is formed between the first semiconductor layer and the second semiconductor layer and a band gap of which is narrower than that of each of the first and second layers, so that band discontinuities in conduction bands and valence bands of the three layers form a barrier to the third semiconductor layer, and that a tunneling current can flow through the third semmiconductor layer owing to an internal electric field of the third semiconductor layer.
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申请公布号 |
US4835581(A) |
申请公布日期 |
1989.05.30 |
申请号 |
US19870076765 |
申请日期 |
1987.07.23 |
申请人 |
HITACHI, LTD. |
发明人 |
KURODA, TAKAO;WATANABE, AKIYOSHI;MIYAZAKI, TAKAO;MATSUMURA, HIROYOSHI |
分类号 |
H01L29/205;H01L21/338;H01L29/10;H01L29/739;H01L29/778;H01L29/812 |
主分类号 |
H01L29/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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