| 摘要 |
PURPOSE:To prevent the generation of a super linear phenomenon, etc., even at a low temperature of -10 deg.C or less while improving the temperature characteristics of an optical output by forming width on the rear edge face side of an active layer in size wider than that on the front edge face side and shaping an electrical insulating film to the upper section of a region including the widened active layer. CONSTITUTION:A V-trench stripe 14 is formed in the longitudinal direction to a block layer 13 so that width thereof is narrowed on the front edge face 15 side and broadened on the rear edge face 16 side. A P-InP clad layer 17 and a P-InGaAsP active layer 18 are shaped successively into the V-trench stripe 14 and onto the block layer 13. The width of the active layer 18 is formed widely on the rear edge face 16 side in response to the width of the V-trench stripe 14. An N-InP clad layer 19 and an N-InGaAs contact layer 20 are shaped onto the active layer 18 in succession. An insulating film 21 composed of SiO2, etc., is formed at a section corresponding to the range of the length L2-L3 of the stripe 14 on the contact layer 20. An ohmic electrode 22 consisting of an Au.Ge.Ni alloy, etc., is formed onto the contact layer 20. |
