| 摘要 |
<p>PURPOSE:To obtain a prescribed high voltage in a short time by charging respective capacitors previously before the boosting action of a boosting circuit for a memory. CONSTITUTION:A direct current power source Vcc is connected to respective connecting points N1-N4 through the drains and the sources of NMOSFETT1-T4. When a precharge is executed before the boosting action, a precharging signal PC is impressed to the respective gates of the FETT1-T4 in a state in which both of clocks phi and the inverse of phi are made into an L level. Thus, a voltage, which is voltage-dropped from the voltage of the power source Vcc for the threshold voltage of the FETT1-T4, is impressed to the connecting points N1-N4 before the boosting action, and capacitors C1-C4 are charged respectively. After this, the impression of the signal PC is stopped, and the voltage of the power source Vcc can be boosted to the prescribed high voltage in the short time and outputted to an output terminal 2.</p> |
