| 摘要 |
PURPOSE:To enable a high-precision alignment even in the case a planarization process is included and further to make it possible to facilitate micrifying of the size of elements by providing a process for forming a step for detecting wafer position before a process for material deposition. CONSTITUTION:Before a process for material deposition, a process for forming a step for detection of wafer position is provided. For instance, when a contact hole 3 having a depth of 8000Angstrom is formed in an insulating film 2, an alignment step 4 having a depth of 8000Angstrom is also formed on a scribe. Then, the wafer position is detected using the alignment step 4, and an etching is performed only on the scribe, thereby forming a step 4a having a depth of 12000Angstrom . Then, using a bias sputtering method, an electrode material Al is deposited, an electrode material 5 is evenly deposited, covering the contact hole 3 and the step 4a leaving an alignment step 6. In the succeeding wiring patterning process, the wafer position is detected using the alignment step 6. |
