| 摘要 |
PURPOSE:To obtain a high-efficiency solar cell whose photodetecting face has a low- reflectance surface structure without using a single-crystal substrate and without a need for a complicated process such as an etching operation or the like by a method wherein the surface which has been formed on the basis of a specific nucleation face and which is composed of a semiconductor crystal of a mountain-shaped facet is used for a photodetecting face. CONSTITUTION:This solar cell is composed of a semiconductor crystal 7A which has been formed on a non-nucleation face 5, whose nucleation density is sufficiently large, which has been formed on the basis of a nucleatoin face of a microscopic surface area so as to generate only a single nucleus and whose surface is a mountain-like facet; a photodetecting face is formed on the mountain-like facet surface. For example, first electrodes 2a and second electrodes 2b are formed to be comb-shaped on a substrate 4; an insulating film 5 is deposited; after that, contact holes are made only in the first electrodes 2a; n<+> type Si single crystals 7a are grown from the first electrodes 2a; SiO2 films 5b are formed on their surface. Then, contact holes are made in the SiO2 film 5 on the second electrodes 2b; p-type Si single crystals 7b are grown; after that, an oxide film 5a is removed; i-type semiconductor crystals are grown; an Si single-crystal 7A is obtained. |
