| 摘要 |
A process for manufacturing integrated circuits comprising insulated gate MOS transistors and double gate memory components, comprises the following steps: forming on the areas where the memory components will be formed a first insulating layer (2) and a first gate level (4); forming on the transistor areas and the memory areas a second insulating layer (5), a second gate level (6) and a first photoresist layer (7); etching the first photoresist layer and the second gate level according to chosen configurations; coating the transistor areas with a second photoresist layer (20). This process further comprises the following steps: selectively etching the second photoresist layer at the center of the places where the transistor drains and sources are to be formed; etching the apparent oxide areas and then the apparent gate and substrate areas; removing the second photoresist layer; and carrying out an ionic implantation of the drains and sources.
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