| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the high temp. stability of a tungsten nitride film, by injecting a mixture of nitrous gas, W source gas and reducing agent gas to selectively deposit the tungsten nitride film only in contact holes. SOLUTION: An insulation frequency 103 is formed on an Si substrate 100 having impurity regions 102 and dry etched to form contact holes 110 to expose the impurity regions 102. A Ti film is deposited on the insulation film 103 and in the contact holes 110, and heat treated to react with the Si substrate 100 exposed through the contact holes 110, thereby forming a TiSix film 104 at their contact surfaces. The substrate temp is risen and a nitrous gas, W source gas and reductive gas are flowed to selectively deposit a tungsten nitride film 10 on the exposed substrate 100 and side wall of the insulation film 103.</p> |
