发明名称 |
Plasma processing apparatus |
摘要 |
A plasma processing apparatus which is effective for surface processing uses a reactive gas activated by plasma excited by microwave energy. Generation and maintaining of the plasma excited by the microwave energy are different where pressure in the gas chamber is above 0.1 Torr. Generating a high density plasma and maintaining the plasma includes the use of a protrudent window which extends into the activating chamber which also operates as a cavity resonator. Oxidation of resist formed on the surface of VLSI may be provided and damage by charge particles prevented by use of a magnetic field.
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申请公布号 |
US4831963(A) |
申请公布日期 |
1989.05.23 |
申请号 |
US19870009685 |
申请日期 |
1987.02.02 |
申请人 |
HITACHI, LTD. |
发明人 |
SAITO, HIROSHI;SASAKI, SHINJI |
分类号 |
H01L21/302;C23C16/452;C23C16/511;H01J37/08;H01J37/32;H01L21/3065 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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