NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

摘要

PURPOSE:To improve the stability of operation and to increase a write margin by preventing a leak current from an output line at the time of rise of the potential of the output line. CONSTITUTION:D type transistors T207-T209 are connected in series for the purpose of outputting a boosting voltage to a column decoder 12 and the output line of a data write circuit and the voltage of the output line is fed back. Consequently, the voltage is surely raised at the time of selection and is surely reduced at the time of nonselection. Thus, the power consumption is reduced regardless of the constitution of inexpensive N-channel MOS transistors, and the voltage margin is increased and the write margin is improved.