| 摘要 |
PURPOSE:To change a superlattice into a mixed crystal at a deep position (1mum or above) by implanting light ions to a semiconductor crystal having superlattice structure under a heated state. CONSTITUTION:An undoped GaAs/Al0.3Ga0.7As superlattice 10 is formed to semiconductor structure, an SiO2 mask 14 is shaped, and the whole is coated with an Si3N4 film 15 and the film 15 is used as a protective film. H<+> beams 16 are ion-implanted while the whole is heated at 750 deg.C (500-800 deg.C) by employing a heater 19. Acceleration voltage of 260kV (1kV or above) and the implantation time of one hr are used as the conditions of ion implantation. Consequently, the superlattice in a section not coated with the SiO2 mask 14 is turned into a mixed crystal. The Si3N4 protective film 15 and the SiO2 mask 14 are removed, and working is conducted. Light and carriers are confined simultaneously through the partial change into the mixed crystal, thus manufacturing a buried laser having excellent characteristics. He<+> beams can be employed. |
