| 摘要 |
PURPOSE:To prevent the growth of a spontaneous oxide film onto an silicon oxide film, the change of the chemical composition of the surface of the siliocn oxide film and the adhesion of fines by growing the extremely thin silicon oxide film onto a semiconductor substrate and continuously forming an silicon nitride film by vapor growth in the same furnace. CONSTITUTION:A source region 2 and a drain region 3 are formed to an N-type silicon substrate 1 through a known selective diffusion technique, and the specified section of an silicon oxide film 4 shaped at the time of selective diffusion is bored through photoetching. A thin silicon oxide film 5 is formed to the bored section through oxidation in an oxygen atmosphere at 750 deg.C in a growth furnace. An silicon nitride film 6 is formed onto the silicon oxide film 5 through the vapor growth method using silane and ammonia at normal pressure continuously in the same growth furnace. An aluminum thin-film 7 is applied as a gate electrode. An MNOS type non-volatile storage device is formed according to a normal MOS process. Consequently, a semiconductor storage device having extremely stable storage characteristics, excellent controllability and high productivity can be manufactured. |
