MANUFACTURE OF COMPLETE DEPLETED-TYPE SIMOX CMOS HAVING STATIC ELECTRICITY DISCHARGE PROTECTION

摘要

PROBLEM TO BE SOLVED: To give ESD protection with respect to a complete depletion-type CMOS element through the use of an ESD element. SOLUTION: The formation of a complete depleted-type ESD protection CMOS element is explained. The CMOS element is formed on an SOI substrate or an SIMOX substrate, and an oxide pad is grown to a thickness of 10-30 nm. For controlling the threshold voltage of an ESD transistor, fitted ions are implanted. The part of a silicon surface film is thinned to a thickness which does not exceed 50 nm. The completely depleted-type CMOS element is formed on the thinned silicon surface film, and an ESD element is formed on the silicon surface film having original thickness.