| 摘要 |
PURPOSE:To improve the using efficiency of a material and to manufacture an epitaxial substrate having a uniform thickness by forming a susceptor in a special shape. CONSTITUTION:Raw gas for vapor growth is introduced by a material introduction passage 2 into a reaction tube 1. A polygonal pyramidal susceptor 3 supported to a rotatable shaft 6 is mounted in the tube 1. The susceptor 3 is made of an upper fairing unit 4 and a lower substrate holder 5, and the diameter increasing ratio of the holder 5 is larger than that of the unit 4. The susceptor is high frequency-heated by an external RF coil 8. The main flow of the raw gas is fed in a state substantially near a laminar flow in the vicinity of the unit 4, thermally decomposed near the surface of a substrate 7 placed on the holder 5, and a semiconductor crystal thin film is grown on the substrate 7. The gas is discharged from an outlet 9. Since the disturbance of the raw gas flow near the susceptor 3 is suppressed, the using efficiency of the material and the uniformity of a thin growing film are improved. |
