| 摘要 |
PURPOSE:To obtain a color picture element signal with high resolution and a high S/N by forming the line sensors of three strings, which correspond to a color filter, in respectively independent well areas on one chip. CONSTITUTION:Three photo-diode strings, which are composed of photo-diodes D1-D3 to be provided with corresponding to the red filter, photo-diodes D4-D6 to correspond to the green filter and photo-diodes D7-D9 to correspond to the blue filter, are provided in respectively independent well areas WL1, WL2 and WL3 on one chip. The respective photo-diodes are connected through switches MOSFETQ10-Q12, which are selected by a picture element selecting circuit PSL, and switches MOSFETQ1-Q9, which are selected by a color selecting circuit CSL, to a common signal line CPS. Since the pitch of the photo-diode can be made small, the high resolution can be obtained. Then, since the well area is independent, there is no cross-talk between respective colors and the picture element signal with high S/N can be obtained. |
