发明名称 FORMING METHOD OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To shorten the time required up to the completion of a product after the writing of information by supplying substrate potential (and/or well potential) from the surface of a chip and loading the chip onto the surface to be loaded as an insulating film and a conductive film laminated onto the rear of the chip are left as they are. CONSTITUTION:In a resin seal type semiconductor device 1 with a mask ROM, substrate potential and well potential are fed from the surface of a semiconductor chip 4, and the chip 4 is loaded onto the surface (the surface to be loaded) of a tab section 2A as a layer 40 laminated onto the rear of the chip 4 is left as it is. Consequently, grinding work (back grinding treatment) grinding the layer 40 laminated onto the rear of the semiconductor chip 4 can be removed. Accordingly, the time required up to the completion of products after an information writing process can be shortened.
申请公布号 JPH01122157(A) 申请公布日期 1989.05.15
申请号 JP19870280825 申请日期 1987.11.05
申请人 HITACHI LTD 发明人 SHIBATA TAKASHI;KOBAYASHI ISAMU
分类号 H01L21/52;H01L21/8246;H01L27/10;H01L27/112 主分类号 H01L21/52
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