| 摘要 |
PURPOSE: To perform annealing for ion implantation and the alloying of metallic wirings in one temperature-time cycle by removing a mask layer together with metallic wiring placed on the mask layer by a peeling method and executing the temperature-time cycle and, restoring ion implantation defects at the same time and alloying the metallic wirings in a doped area. CONSTITUTION: One metallic wiring 4 is formed in each doped area 3 by vapor- depositing metallic wiring 4, 4a, and 4b in the direction shown by the arrows (i). Since the wiring is formed by using the same mask layer 2, the wiring is self-aligned with each doped area 3. After the wiring is formed, the mask layer 3 and parts of the wiring 4a and 4b on the layer 3 are removed by a peeling method. Then the doped areas 3 and the wiring 4 on the areas 3 are simultaneously subjected to temperature-time cycle treatment in, for example, a rapid annealing device so as to restore implantation strains and to alloy the wiring 40. During the course of the annealing, the temperature which works as a function of time is selected so that the transmission resistance of the contact formed of the alloyed wiring 40 does not exceed a value decided to the proposed application of a device.
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